• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A method of locating devices after transferring a utility layer (80), the method comprising the steps of: a) providing a carrier substrate (10) comprising: a device layer (40) having a free surface; and alignment marks (50); b) providing a donor substrate (60); c) forming a weak zone (70) in the donor substrate (60), the weak zone (70) defining a wear layer (80); d) bonding the donor substrate (60) and the carrier substrate (10); and e) breaking the donor substrate (60) in the weak zone (70) to transfer the wear layer (80) to the device layer (40); the method being characterized in that the alignment marks (50) are disposed in cavities (90) formed in the device layer (40), the cavities (90) having an opening that communicates with the free surface of the device layer (40 ) is flush.
    公开号:AT521083A2
    申请号:T9279/2014
    申请日:2014-06-24
    公开日:2019-10-15
    发明作者:Broekaart Marcel；Radu Ionut；Lagahe Blanchard Chrystelle
    申请人:Soitec Silicon On Insulator；
    IPC主号:
    专利说明:

    SUMMARY
    A method of locating devices after transferring a wear layer (80), the method comprising the steps of:
    a) the provision of a carrier substrate (10) comprising:
    a device layer (40) having a free surface; and alignment marks (50);
    b) providing a donor substrate (60);
    c) forming a weak zone (70) in the donor substrate (60), the weak zone (70) defining a wear layer (80);
    d) bonding the donor substrate (60) and the carrier substrate (10); and
    e) breaking the donor substrate (60) in the weak zone (70) to transfer the wear layer (80) to the device layer (40);
    the method being characterized in that the alignment marks (50) are disposed in cavities (90) formed in the device layer (40), wherein the cavities (90) have an opening which communicates with the free surface of the device layer (40 ) is flush.
    (Fig. 2) / 14
    • ·
    FIELD OF THE INVENTION
    The present invention relates to a method for locating devices after transfer of a useful layer to a carrier substrate.
    STATE OF THE ART
    A prior art method for locating devices after transferring a useful layer 8 to a carrier substrate 1, as illustrated in Figure 1a, comprises the following steps:
    aO) the provision of a carrier substrate 1 comprising:
    a front side 2;
    - A back 3 parallel to the front 2; and
    a device layer 4 positioned on the front side 2, the device layer 4 comprising alignment marks 5;
    bO) the provision of a donor substrate 6;
    cO) forming a weak zone 7 in the donor substrate 6, the weak zone 7 defining a wear layer 8;
    dO) assembling the donor substrate 6 and the carrier substrate 1; and eO) breaking the donor substrate 6 in the weak zone 7 to transfer the wear layer 8 to the device layer 4.
    The device layer 4 includes devices such as transistors, (npn or pnp) junctions, interconnects, and any other structures.
    The wear layer 8 generally comprises an opaque semiconductor layer.
    After the breaking step eO), the wear layer 8 masks the devices of the device layer 4 and the alignment marks 5.
    The main disadvantage of this method is that the alignment marks 5 are no longer accessible or recognizable.
    Therefore, as shown in FIG. 1 b, which illustrates one common practice, openings 9 (or holes) in the wear layer 8 must be made to expose the registration marks 5.
    The method of forming the openings 9 generally includes a photolithography step followed by an etching step.
    The photolithography step is intended to define the shape and position of the openings in the wear layer 9. However, this step, which is performed without any other landmark other than the edge of the supporting substrate 1, has an accuracy of + / 14 ······· · · · · ········· ···. - 100 μηη. Therefore, the alignment marks 5 can be localized only within +/- 100 μιτι. The openings 9 must have a side length of about 250 μιτι.
    Such a page takes up too much space and is unacceptable.
    It is therefore an object of the invention to provide a simpler method of locating devices after transferring a wear layer 8 which allows smaller openings to be formed than by the prior art techniques.
    BRIEF DESCRIPTION OF THE INVENTION
    The present invention aims to remedy the above-mentioned drawbacks and relates to a method for locating devices after transferring a wear layer, the method comprising the following steps:
    a) the provision of a carrier substrate comprising
    a device layer comprising a free surface; and
    - alignment marks;
    b) the provision of a donor substrate;
    c) forming a weak zone in the donor substrate, the weak zone defining a wear layer;
    d) assembling the donor substrate and the carrier substrate; and
    e) breaking the donor substrate in the weak zone to transfer the wear layer to the device layer.
    The alignment marks are disposed in cavities formed in the device layer, the cavities having an opening that is flush with the free surface of the device layer.
    The alignment marks are placed so that it becomes possible to locate the devices.
    The wear layer may be formed from a set of sublayers.
    The wear layer is generally opaque and therefore masks the device layer after step e).
    The cavities have walls and the volume defined by the walls of a cavity and its opening make up the volume of the cavity.
    By "alignment marks positioned in cavities" is meant that the alignment marks are positioned in the volume of the cavities.
    / 14 • ·
    The Applicant has observed the presence of holes passing through the wear layer after the breaking step e) and in positional correspondence with the cavities. The holes thus enlarge the cavities in the wear layer, so that the alignment marks are visible from the free surface of the wear layer.
    Thus, the devices of the device layer can be led out of the free surface of the wear layer.
    Further, it is not necessary to carry out manufacturing steps specific to the formation of holes in the wear layer. The holes are automatically formed in the positions of the cavities at the time of transfer of the wear layer.
    According to an embodiment method, the assembly step d) comprises a direct bonding step carried out in an environment at a pressure below 20 mbar.
    Thus, as the Applicant has observed, the through holes in the wear layer have a shape corresponding to the opening of the cavities.
    Therefore, the through holes in the wear layer do not overreach beyond the opening of the cavities.
    According to one embodiment, the cavities extend into the carrier substrate.
    According to one embodiment, the alignment marks are arranged at the bottom of the cavities.
    According to one embodiment, the device layer regularly comprises devices distributed over the entire extent of the device layer.
    According to one embodiment, an opaque layer is present on the wear layer before the assembly step d).
    According to one embodiment, the opaque layer comprises at least one material selected from the following group: tungsten, titanium, tungsten silicide, titanium silicide, nickel silicide, nickel and platinum silicide.
    According to one embodiment, the step c) of forming the weak zone is carried out by implanting at least one of the elements selected from the following group: hydrogen and helium.
    / 14 · · · · · · · · ····· «· ······· · 9 ·
    9 9 9 9 9 9 9 99 9 9 9
    According to an embodiment, the crushing step e) comprises a heat treatment carried out at a temperature between 200 and 500 ° C.
    According to one embodiment, the thickness of the wear layer is less than 8000 Å and preferably less than 5000 Å.
    According to one embodiment, the wear layer comprises sub-layers with different doping.
    BRIEF DESCRIPTION OF THE DRAWINGS
    Other features and advantages will become apparent from the following description of embodiments of a method for locating devices according to the invention, given by way of non-limiting example and with reference to the accompanying drawings, in which:
    Figures 1a and 1b are a schematic representation of a structure obtained by a method for locating devices according to the prior art;
    Figure 2 is a schematic representation of a method for locating devices according to an embodiment of the invention;
    Figure 3 is a schematic representation of the structure obtained with the method for locating devices according to a second embodiment of the invention; and
    Figure 4 is a schematic representation of the method for locating devices according to an embodiment of the invention.
    DETAILED DESCRIPTION OF THE EMBODIMENTS OF THE INVENTION
    For the different embodiments, the simplicity of the
    For brevity, the same reference numbers are used for elements that are identical or have the same function.
    Figures 2 and 3 schematically illustrate a method for locating devices.
    To facilitate illustration, the corresponding thicknesses of the various layers are not reproduced to scale.
    Step a) of the method for locating devices comprises providing a carrier substrate 10.
    The carrier substrate 10 may include a bulky substrate on which a device layer 40 is formed.
    / 14
    The solid substrate may be made of any material conventionally used in microelectronics, optics, optoelectronics, and photovoltaics.
    In particular, the bulky substrate comprises at least one material selected from the following group: silicon, silicon carbide, silicon germanium, glass, ceramics, and a metal alloy.
    The device layer 40 includes devices such as electronic devices (eg, transistors, junctions, etc.), interconnects, and / or metallized zones.
    The devices are formed using techniques well known to those skilled in the art.
    Particularly advantageously, the devices are regularly distributed over the entire extent of the device layer 40.
    Cavities 90 are formed in the device layer 40. The cavities 90 are open and include an opening that is flush with the free surface of the device layer 40.
    The cavities 90 have walls. The walls of the cavity 90 and the opening of the cavity 90 define the volume of the cavity 90.
    Advantageously, the cavities 90 extend into the carrier substrate 10.
    Alignment marks 50 are arranged in the volume of the cavities 90 and the alignment marks 50 are located at a distance from the opening of the cavities 90th
    The alignment marks 50 are positioned so that it is possible to accurately locate the devices of the device layer 40.
    The alignment marks 50 are conventionally used to align photolithography masks.
    The alignment marks 50 may be in the form of crosses, arrows or interference patterns, or any other shape that permits accurate location of the devices.
    In this regard, those skilled in the art will appreciate a technical description of the alignment or photolithography masks in "Fundamentals of Microfabrication: The Science of Miniaturization", 2nd Ed., Marc J. Madou, Nanogen, Inc. San Diego, CA ".
    / 14 • ·
    Advantageously, the alignment marks 50 are positioned at the bottom of the cavities 90.
    The step b) of the method of finding devices includes providing a donor substrate 60.
    The donor substrate 60 may be made of any material conventionally used in microelectronics, optics, optoelectronics, and photovoltaics.
    In particular, the donor substrate 60 comprises at least one material selected from the following group: silicon, silicon carbide and silicon germanium.
    The donor substrate 60 may advantageously comprise a semiconductor material.
    The step c) of the method of finding devices includes forming a weak zone 70 in the donor substrate 60.
    The donor substrate 60 has a first surface. The weak zone 70 and the first surface of the donor substrate 60 define a wear layer 80 to be transferred to the device layer 40.
    The weak zone 70 can be obtained by implanting atoms. The attenuation implant can be performed with a single element (eg, hydrogen or helium), but also with a plurality of sequentially implanted elements (eg, hydrogen and helium).
    Advantageously, the hydrogen is implanted with an energy between 20 and 70 keV and a dose between 4x10 16 and 6x10 16 atoms / cm 2
    Advantageously, the helium is implanted with an energy between 20 and 70 keV and a dose between 0.5x10 16 and 3x10 16 atoms / cm 2 .
    Particularly advantageously, the wear layer 80 has a thickness which is less than 8000 Å and preferably less than 5000 Å.
    The step d) of the method for locating devices comprises assembling the donor substrate 60 and the carrier substrate 10.
    Advantageously, the assembly step d) is carried out by molecular adhesion.
    The assembly is advantageously carried out by directly contacting the wear layer 80 with the device layer. The connection becomes so / 14
    · Stated that the volume of the cavities 90 is at least partially maintained. Therefore, the presence of voids 90 creates non-adhesive zones.
    Particularly advantageously, the assembly step d) comprises an adhesion step with molecular adhesion, which is carried out in an environment at a pressure below 20 mbar (2000 Pa).
    As illustrated in Figure 4, an intermediate layer 100 may be disposed on the wear layer 80 prior to assembly step d).
    The intermediate layer 100 may be an opaque layer that is positioned on the wear layer 80.
    The opaque layer may comprise at least one material selected from the group consisting of tungsten, titanium, tungsten silicide, titanium silicide, nickel silicide, nickel and platinum silicide.
    The step e) of the method of locating devices includes breaking the donor substrate 60 in the weak zone 70 to transfer the wear layer 80 to the device layer 40.
    Thus, after step e), the wear layer 80 masks the devices.
    When an opaque layer has been formed on the wear layer 80 prior to assembly step d), the opaque layer is between the wear layer 80 and the device layer 40 after the break step.
    Advantageously, the crushing step e) comprises a heat treatment carried out at a temperature between 200 and 500 ° C.
    The applicant has found particularly advantageously after the breaking step e) the existence of holes which extend through the wear layer 80 and the opaque layer, if the latter is present.
    In addition, the through holes in the wear layer 80 are in positional conformity with the cavities 90 so that the holes extend the cavities 90 into the wear layer 80.
    Further, the opening of each cavity 90 is inscribed in the opening of a hole of the wear layer 80.
    In particular, for a step d) involving molecular adhesion carried out in an environment at a pressure below 20 mbar (2000 Pa), each hole in the wear layer 80 has an opening corresponding to the opening in the cavity 90, which extends it, as illustrated in Figure 3.
    / 14 ················································
    The presence of these holes in the wear layer 80 is advantageously exploited to expose the registration marks 50 positioned in the cavities 90.
    Thus, it is possible to locate the devices masked by the wear layer 80.
    权利要求:
    Claims (11)
    [1]
    A method for locating devices after transferring a wear layer (80), the method comprising the steps of:
    a) the provision of a carrier substrate (10) comprising:
    a device layer (40) having a free surface; and alignment marks (50);
    b) providing a donor substrate (60);
    c) forming a weak zone (70) in the donor substrate (60), the weak zone (70) defining a wear layer (80);
    d) bonding the donor substrate (60) and the carrier substrate (10); and
    e) breaking the donor substrate (60) in the weak zone (70) to transfer the wear layer (80) to the device layer (40);
    the method being characterized in that the alignment marks (50) are disposed in cavities (90) formed in the device layer (40), the cavities (90) having an opening that communicates with the free surface of the device layer (40 ) is flush.
    [2]
    2. The method of claim 1, wherein the assembly step d) comprises a step of adhesion by molecular adhesion carried out in an environment at a pressure below 20 mbar.
    [3]
    3. The method of claim 1 or 2, wherein the cavities (90) extend into the carrier substrate (10).
    [4]
    4. The method according to any one of claims 1 to 3, wherein the alignment marks (50) at the bottom of the cavities (90) are arranged.
    [5]
    The method of any one of claims 1 to 4, wherein the device layer (40) comprises devices that are regularly distributed over the entire extent of the device layer (40).
    [6]
    6. The method according to any one of claims 1 to 5, wherein an opaque layer between before the assembly step d) on the wear layer (80) is present.
    10/14 * ································································································ · ·
    [7]
    The method of claim 6, wherein the opaque layer comprises at least one material selected from the group consisting of tungsten, titanium, tungsten silicide, titanium silicide, nickel silicide, nickel and platinum silicide.
    [8]
    The method of any one of claims 1 to 7, wherein step c) of forming the weak zone (70) is performed by implanting at least one of the species selected from the group consisting of hydrogen and helium.
    [9]
    9. The method according to any one of claims 1 to 8, wherein the crushing step e) comprises a heat treatment, which is carried out at a temperature between 200 and 500 ° C.
    [10]
    10. The method according to any one of claims 1 to 9, wherein the thickness of the wear layer (80) is less than 8000 Ä and preferably less than 5000 Ä.
    [11]
    11.The method according to any one of claims 1 to 10, wherein the wear layer (80) comprises sub-layers with different doping.
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    法律状态:
    优先权:
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